Абстрактный

Thermal Conductivity of Silicon Thin Films Deposited On Porous Alumina by PECVD

Ktifa S and Ezzaouia H

In this paper we have studied the thermal properties of silicon thin films deposited by plasma enhancement chemical vapor deposition (PECVD) on porous aluminum using the phothermal deflection technique (PTD). The aim of this work is to investigate the influence of anodisation current (between 200 to 400 mV) on the thermal conductivity of samples. We present a computational model to determine the thermal conductivity K. The coincidences between the experimental and theoretical curves permit to deduce the values of thermal conductivity with a good accuracy. In fact, it was found that K decrease with the anodisation current.