Ashok R.Pawar, D. R. Kendre, V. B. Pujari
The polycrystalline Hg- doped ZnS thin films semiconductor photoelectrodes of various compositions were prepared by chemical bath deposition technique. The deposition conditions and preparation parameters are optimized to have good quality of films. As-deposited films were made use as an active photoelectrodes in a photoelectrochemicalcellwithpolysulfide (1M) as an electrolyte and impregnatedgraphite as the counter electrode. As fabricated photoelectrochemical (PEC) cells are then used to study their optical characteristics. The spectral response characteristics of the films at room temperature were studied under the constant illumination of light of intensity 20 mWcm-2. Mott-Schottky plots were also studied and the flat band potential (Vfb) is found to be increased with electrode composition x and reached to its maximum value at x = 0.1. Transient response times of as-deposited photoelectrodes of different compositions were studied.
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