Абстрактный

Effect of Stress on the Performance of Silicon Solar Cell

K. Santhosh kumar, R. Srinivasan

In this paper the effect of stress on the performance of silicon solar cell (photovoltaic device) is studied using TCAD simulations. The solar cell performance metrics such as open circuit voltage and short circuit current are studied for various stress levels. It was observed that the compressive stress enhances the open circuit voltage, whereas tensile stress improves the short circuit current through mobility change. It is also observed that the impact of tensile stress on life time enhances both the open circuit voltage and short circuit current.