Sandip Pan, Arunava Mandal, Subrata Mukherjee, Achintya Kumar Saha, Anirban Roychowdhury, Dipankar Das, Asmita SenGupta
The positron annihilation technique has been employed to study the defect recovery in 40MeV alphairradiated undoped InSb. After irradiation the sample has been subjected to an isochronal annealing over temperature region of 25-400OC with an annealing time of 30 minutes at each set temperature. After each annealing the Doppler broadening annihilation line-shape measurements are carried out at room temperature. Radiation induced defect formation in the sample due to ion implantation and its recovery with annealing temperature have been investigated. The increase in the line-shape parameter S along with defect specific parameter R in the temperature region 75 to 150OC and 200 to 300OC indicate the migration of vacancies and the formation of vacancy clusters. The defects start disappearing between 300 and 400OC.
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