Абстрактный

A Novel SB-MOSFET with Record Switching Characteristic

Om Prakash Mahto,S. Baishya,Koushik Guha ,Ajay Parmar

This paper presents a novel 65 nm nchannel SB-MOSFET(Schottky barrier MOSFET) based Tunnel Field Effect transistor using Non-Local Band-to- Band tunneling model that shows the good switching characteristic.Stacks of Erbium silicide and Cobalt silicide is used as source/drain because of low schottky barrier height of Erbium silicide and high schottky barrier height of Cobalt silicide. TCAD Simulation is made which shows the result with the record high Ion/Ioff ratio of 4.08×109and the steepest pointsub threshold swing of 77.12mV/decade.